首页>
外国专利>
VIRTUAL DRAIN FOR DECREASED HARMONIC GENERATION IN FULLY DEPLETED SOI (FDSOI) RF SWITCHES
VIRTUAL DRAIN FOR DECREASED HARMONIC GENERATION IN FULLY DEPLETED SOI (FDSOI) RF SWITCHES
展开▼
机译:虚拟漏极,用于全耗尽SOI(FDSOI)射频开关中谐波产生的降低
展开▼
页面导航
摘要
著录项
相似文献
摘要
The present disclosure relates to semiconductor structures and, more particularly, to virtual drains for decreased harmonic generation in fully depleted SOI (FDSOI) RF switches and methods of manufacture. The structure includes one or more active devices on a semiconductor on insulator material which is on top of a substrate; and a virtual drain region composed of a well region within the substrate and spaced apart from an active region of the one or more devices, the virtual drain region configured to be biased to collect electrons which would accumulate in the substrate.
展开▼