LATTICE MATCHED TUNNEL BARRIERS FOR PERPENDICULARLY MAGNETIZED HEUSLER ALLOYS

摘要

A device comprising a first magnetic layer (e.g., Co₂MnSi Heusler alloy or a tetragonally distorted perpendicularly magnetized (PMA) Heusler alloy such as Mn₃Ga, Mn₃Ge, etc.) and a second magnetic layer (e.g., Co₂MnSi Heusler alloy or a tetragonally distorted perpendicularly magnetized (PMA) Heusler alloy such as Mn₃Ga, Mn₃Ge, etc.), and a metal halide tunnel barrier in between the first and second magnetic layers, wherein the metal halide tunnel barrier (e.g., NaF, NaCl, NaBr, LiF, LiCl, and LiBr or their combination) is lattice matched within a predetermined limit (e.g. 5%) of both the first and second magnetic layers.