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Fabrication of Semiconductor Device Using a Shared Material in a Phase-Change Material (PCM) Switch Region and a Resonator Region
Fabrication of Semiconductor Device Using a Shared Material in a Phase-Change Material (PCM) Switch Region and a Resonator Region
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机译:使用相变材料(PCM)开关区域和谐振器区域中的共享材料制造半导体器件
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摘要
In fabricating a semiconductor device, a shared material is formed in a resonator region of the semiconductor device and in a phase-change material (PCM) switch region of the semiconductor device. A portion of the shared material is removed to concurrently form a heat spreader comprising the shared material in the PCM switch region and a piezoelectric segment comprising the shared material in the resonator region. The piezoelectric segment in the resonator region and the heat spreader in the PCM switch region are situated at substantially the same level in the semiconductor device. The PCM switch region includes a heating element between the heat spreader and a PCM. The resonator region includes the piezoelectric segment between two electrodes.
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