METHOD FOR MEASURING CRITICAL DIMENSION AND IMAGE-PROCESSING APPARATUS FOR MEASURING CRITICAL DIMENSION

摘要

A method for measuring critical dimension is provided. The method includes the steps of: receiving a critical-dimension scanning electron microscopy (CD-SEM) image of a semiconductor wafer; performing an image-sharpening process and an image de-noise process on the CD-SEM image to generate a first image; performing an edge detection process on the first image to generate a second image; performing a connected-component labeling process on the second image to generate an output image; and calculating a critical-dimension information table of the semiconductor wafer according to the output image.