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SELF-BOOST, SOURCE FOLLOWING, AND SENSE-AND-HOLD FOR ACCESSING MEMORY CELLS
SELF-BOOST, SOURCE FOLLOWING, AND SENSE-AND-HOLD FOR ACCESSING MEMORY CELLS
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机译:自记忆,源跟随和感应保持式存储单元的访问
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摘要
Methods, systems, and devices for operating a memory cell or cells are described. A capacitor coupled with an access line may be precharged and then boosted such that the charge stored in the capacitor is elevated to a higher voltage with respect to a memory cell. The boosted charge in the capacitor may support sensing operations that would otherwise require a relatively higher voltage. Some embodiments may employ charge amplification between an access line and a sense component, which may amplify signals between the memory cell and the sense component, and reduce charge sharing between these components. Some embodiments may employ “sample-and-hold” operations, which may re-use certain components of a sense component to separately generate a signal and a reference, reducing sensitivity to manufacturing and/or operational tolerances. In some embodiments, sensing may be further improved by employing “self-reference” operations that use a memory cell to generate its own reference.
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