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DIFFERENTIAL NON-VOLATILE MEMORY CELL FOR ARTIFICIAL NEURAL NETWORK
DIFFERENTIAL NON-VOLATILE MEMORY CELL FOR ARTIFICIAL NEURAL NETWORK
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机译:人工神经网络的差分非挥发性记忆细胞
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摘要
Use of a non-volatile memory array architecture to realize a neural network (BNN) allows for matrix multiplication and accumulation to be performed within the memory array. A unit synapse for storing a weight of a neural network is formed by a differential memory cell of two individual memory cells, such as a memory cells having a programmable resistance, each connected between a corresponding one of a word line pair and a shared bit line. An input is applied as a pattern of voltage values on word line pairs connected to the unit synapses to perform the multiplication of the input with the weight by determining a voltage level on the shared bit line. The results of such multiplications are determined by a sense amplifier, with the results accumulated by a summation circuit.
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