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OPTICAL DEVICE INCLUDING THREE-COUPLED QUANTUM WELL STRUCTURE HAVING ASYMMETRIC MULTI-ENERGY LEVELS

机译:具有不对称多能级的三耦合量子阱结构的光学器件

摘要

Provided is an optical device including an active layer, which includes two outer barriers and a coupled quantum well between the two outer barriers. The coupled quantum well includes a first quantum well layer, a second quantum well layer, a third quantum well layer, a first coupling barrier between the first quantum well layer and the second quantum well layer, and a second coupling barrier between the second quantum well layer and the third quantum well layer. The second quantum well layer is between the first quantum well layer and the third quantum well layer. An energy band gap of the second quantum well layer is less than an energy band gap of the first quantum well layer, and an energy band gap of the third quantum well layer is equal to or less than the energy band gap of the second quantum well layer.
机译:提供一种包括有源层的光学器件,该有源层包括两个外部势垒以及在两个外部势垒之间的耦合量子阱。耦合量子阱包括第一量子阱层,第二量子阱层,第三量子阱层,在第一量子阱层和第二量子阱层之间的第一耦合势垒,以及在第二量子阱之间的第二耦合势垒。层和第三量子阱层。第二量子阱层在第一量子阱层和第三量子阱层之间。第二量子阱层的能带隙小于第一量子阱层的能带隙,并且第三量子阱层的能带隙等于或小于第二量子阱的能带隙层。

著录项

  • 公开/公告号US2020287081A1

    专利类型

  • 公开/公告日2020-09-10

    原文格式PDF

  • 申请/专利权人 SAMSUNG ELECTRONICS CO. LTD.;

    申请/专利号US202016884674

  • 发明设计人 BYUNGHOON NA;CHANGYOUNG PARK;YONGHWA PARK;

    申请日2020-05-27

  • 分类号H01L33/06;G02F1/017;H01L33/04;H01L33/30;H01L33/60;

  • 国家 US

  • 入库时间 2022-08-21 11:19:57

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