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INTERCONNECT STRUCTURE WITHOUT BARRIER LAYER ON BOTTOM SURFACE OF VIA

机译:VIA底部表面上无障碍层的互连结构

摘要

Embodiments and methods of an interconnect structure are provided. The interconnect structure includes a via, a trench that has an overlapping area with a top of the via, and a first layer of conducting material that has an overlapping area with a bottom of the via. The interconnect also includes a second layer of conducting material formed in the via, and a third layer of conducting material formed in the trench. The second layer of conducting material is in contact with the first layer of conducting material without a barrier in between the two conducting materials. The absence of the barrier at the bottom of the via can reduce the contact resistance of the interconnect structure.
机译:提供了互连结构的实施例和方法。互连结构包括通孔,具有与通孔的顶部重叠的区域的沟槽以及具有与通孔的底部重叠的区域的导电材料的第一层。互连还包括在通孔中形成的第二导电材料层和在沟槽中形成的第三导电材料层。第二导电材料层与第一导电材料层接触,而在两种导电材料之间没有阻挡层。在通孔的底部不存在势垒可以减小互连结构的接触电阻。

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