Low-temperature high-performance thermoelectric material and preparation method thereof

摘要

A low-temperature high-performance thermoelectric material possesses a chemical formula of (Ag_yCu_2−y)_1−xTe_1−zSe_z, wherein −0.025≤x≤0.075, 0.6≤y≤1.4, 0z≤0.25, diffraction peaks of a main phase of the thermoelectric material are indexed as a cubic structure at room temperature of 300 K, a highest ZT value between 300 K and 673 K is in range of 0.4 to 1.6, an average ZT value (ZT)_avg is in range of 0.2 to 1.4. The highest ZT value of this material at the room temperature is comparable to that of Bi₂Te₃, which is an excellent complement to existing low-temperature thermoelectric materials. At the same time, the present invention also indicates a new strategy to improve the low-temperature thermoelectric performance of Cu₂X-based (here, X is S, Se, Te) materials, and lays a foundation for the application of Cu₂X-based materials in the field of low-temperature thermoelectricity.