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GaN-BASED THRESHOLD SWITCHING DEVICE AND MEMORY DIODE
GaN-BASED THRESHOLD SWITCHING DEVICE AND MEMORY DIODE
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机译:GaN基阈值开关器件和存储器二极管
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摘要
A switching device including a GaN substrate; an unintentionally doped GaN layer on a first surface of the GaN substrate; a regrown unintentionally doped GaN layer on the unintentionally doped GaN layer; a regrowth interface between the unintentionally doped GaN layer and the regrown unintentionally doped GaN layer; a p-GaN layer on the regrown unintentionally doped GaN layer; a first electrode on the p-GaN layer; and a second electrode on a second surface of the GaN substrate.
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