Vector-matrix multiplication using non-volatile memory cells

摘要

Technology is described herein for performing multiplication using non-volatile memory cells. A multiplicand may be stored a node that includes multiple non-volatile memory cells. Each memory cell in a node may be programmed to one of two physical states, with each non-volatile memory cell storing a different bit of the multiplicand. Multiplication may be performed by applying a multiply voltage to the node of memory cells and processing memory cell currents from the memory cells in the node. The memory cell current from each memory cell in the node is multiplied by a different power of two. The multiplied signals are summed to generate a “result signal,’ which represents a product of the multiplier and a multiplicand stored in the node. If desired, “binary memory cells” may be used to perform multiplication. Vector/vector and vector/matrix multiplication may also be performed.