首页> 外国专利> METHOD FOR PRODUCING COMPOSITE CATHODES BASED ON TITANIUM SILICIDES FOR ION-PLASMA SYNTHESIS OF MULTICOMPONENT NANOSTRUCTURAL COATINGS

METHOD FOR PRODUCING COMPOSITE CATHODES BASED ON TITANIUM SILICIDES FOR ION-PLASMA SYNTHESIS OF MULTICOMPONENT NANOSTRUCTURAL COATINGS

机译:基于硅化钛的复合阴极的离子-等离子体合成多组分纳米结构涂层的制备方法

摘要

The invention relates to methods for producing composite cathodes for ion-plasma synthesis of multicomponent nanostructured coatings obtained by vacuum-arc and magnetron methods. The technical result of the invention allows for the electrical connection of an isomorphically spliced cathode with its electrode holder-cathode leg. According to the invention, the synthesis of titanium silicides is carried out stepwise in a composite graphite-containing crucible: at the first stage, a compacted copper-silicon charge is placed in the lower graphite-containing crucible, and a charge of the copper-titanium fractional mixture is placed in the upper crucible; at the second stage, the electric crucible is melted in the upper crucible to obtain a melt of copper-titanium components with the subsequent dissolution at 1100-1400 ° C of a stopper diaphragm plug made of compact titanium metal in the molten copper-titanium components until a low-melting hypereutectic alloy is obtained, the charge is electrically melted in the lower crucible copper-silicon to produce a hypereutectic alloy; at the third stage, the synthesis of titanium silicides is carried out with the initiation of an exothermic reaction in the titanium component until the formation of silicides is achieved at 1600-2150 ° C: up to 50% of titanium silicides with the formation of phases of titanium silicides and silicon bronze; in the fourth stage, with the inductor turned off, the intermediate product for the vacuum target is obtained by tilting the composite crucible by 180 °.
机译:本发明涉及制备复合阴极的方法,该复合阴极用于通过真空电弧和磁控管方法获得的多组分纳米结构涂层的离子-等离子体合成。本发明的技术结果允许同构拼接的阴极与其电极保持器-阴极腿的电连接。根据本发明,在含石墨的复合坩埚中分步进行硅化钛的合成:第一步,将压实的铜-硅装料放入下部含石墨的坩埚中,然后将铜-将钛分馏混合物置于上部坩埚中;在第二阶段,将电坩埚在上坩埚中熔化以获得铜钛组分的熔体,随后将由紧凑型钛金属制成的塞子隔膜塞在1100-1400°C溶解在熔融的铜钛组分中直到获得低熔点的过共晶合金,将电荷在下部坩埚铜硅中电融化,以产生过共晶合金;在第三阶段,在钛组分中发生放热反应的情况下进行硅化钛的合成,直到在1600-2150°C达到硅化物的形成:高达50%的硅化钛与相形成钛硅化物和硅青铜;在第四阶段,在关闭电感器的情况下,通过将复合坩埚倾斜180°获得用于真空目标的中间产品。

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