Method for preparing THz detector based on MOSFET drain rasterization

摘要

The present invention discloses a method for preparing a THz detector based on MOSFET drain rasterization comprising: preparing a bottom device of the THz detector by sequentially performing photolithography, ion implantation, removing of photoresist, oxide growth, sacrificial layer deposition, etching, source/drain region ion implantation, and source region electrode growth on a silicon substrate; preparing a drain grating structure in conformity with requirements by means of mask lithography etching on the bottom device of the THz detector; preparing a drain layer with a desired deposition thickness from the drain grating structure by using electron beam evaporation to complete the drain rasterization of the device; and further evaporation-depositing a gate layer on the device finished with the drain rasterization. The preparation process of the present invention is mature and is controllable, which is advantageous to realize integrated mass production of the detector and reduce the cost of the terahertz detector.