首页> 外国专利> Ni-BASED CORROSION-RESISTANT ALLOY POWDER FOR ADDITIVE MANUFACTURING, AND METHOD FOR PRODUCING ADDITIVE MANUFACTURING PRODUCT OR MEMBER FOR SEMICONDUCTOR PRODUCTION DEVICES USING THE POWDER

Ni-BASED CORROSION-RESISTANT ALLOY POWDER FOR ADDITIVE MANUFACTURING, AND METHOD FOR PRODUCING ADDITIVE MANUFACTURING PRODUCT OR MEMBER FOR SEMICONDUCTOR PRODUCTION DEVICES USING THE POWDER

机译:镍基耐蚀合金粉末及其制造方法,以及使用该粉末的半导体生产装置用添加剂生产产品或部件的方法

摘要

Provided is a Ni-based corrosion-resistant alloy powder preferable for additive manufacturing, and provided are an additive manufacturing product and a member for semiconductor production devices having excellent corrosion resistance with few defects by using this powder. A Ni-based corrosion-resistant alloy powder for additive manufacturing comprises in mass%: 14.5 to 24.0% of Cr; 12.0 to 23.0% of Mo; 0.01 to 7.00% of Fe; 0.001 to 2.500% of Co; 0.0001 to 0.0050% of Mg; 0.001 to 0.040% of N; 0.005 to 0.50% of Mn; 0.001 to 0.200% of Si; 0.01 to 0.50% of Al; 0.001 to 0.500% of Ti; 0.001 to 0.250% of Cu; 0.001 to 0.300% of V; 0.0001 to 0.0050% of B; 0.0001 to 0.0100% of Zr; and 0.0010 to 0.0300% of O, and the balance of Ni with inevitable impurities. The inevitable impurities comprise less than 0.05% of C; less than 0.01% of S; and less than 0.01% of P. A method for producing an additive manufacturing product or a member for semiconductor production devices comprises performing additive manufacturing by using the Ni-based corrosion-resistant alloy powder.
机译:提供一种优选用于增材制造的Ni基耐蚀合金粉末,并提供一种增材制造产品和一种用于半导体生产装置的构件,其通过使用该粉末而具有优异的耐腐蚀性且几乎没有缺陷。用于增材制造的Ni基耐蚀合金粉末的质量百分比为:14.5至24.0%Cr;和Mo的12.0%至23.0%;铁的0.01至7.00%;钴的0.001至2.500%;镁的0.0001至0.0050%;氮的0.001至0.040%; Mn的0.005%至0.50%;硅的0.001至0.200%; Al的0.01至0.50%;钛的0.001至0.500%;铜的0.001至0.250%; V的0.001至0.300%; B的0.0001至0.0050%; Zr的0.0001〜0.0100%; O为0.0010〜0.0300%,Ni为不可避免的杂质。不可避免的杂质占C的0.05%以下;少于S的0.01%;用于生产增材制造产品或用于半导体生产设备的构件的方法包括通过使用Ni基耐蚀合金粉末进行增材制造。

著录项

  • 公开/公告号SG11202001546WA

    专利类型

  • 公开/公告日2020-03-30

    原文格式PDF

  • 申请/专利权人 HITACHI METALS LTD.;

    申请/专利号SG20201101546W

  • 发明设计人 DAIGO YUZO;SUGAHARA KATSUO;

    申请日2018-08-08

  • 分类号B22F3/16;B22F1;B33Y70;C22C19/05;

  • 国家 SG

  • 入库时间 2022-08-21 11:15:47

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