PRIMARY AND SECONDARY DEVICE DEEP INTEGRATION VOLTAGE SENSOR, AND DESIGN PROCESS METHOD THEREFOR

摘要

The present invention relates to the technical field of voltage detection, and provides a primary and secondary device deep integration voltage sensor, and a design process method therefor. The primary and secondary device deep integration voltage sensor is embedded inside a primary device of a power system, comprising: a voltage conversion circuit board, a low-voltage adjustment circuit (14), and an output end (15); the voltage conversion circuit board is configured to be connected to a wire inlet end of the primary device so as to convert a high voltage in the primary device into a low voltage; the voltage conversion circuit board comprises: a high-voltage arm (12) and a low-voltage arm (13); the high-voltage arm (12) comprises a plurality of high-voltage capacitors, and the low-voltage arm (13) comprises a plurality of low-voltage capacitors; the low-voltage adjustment circuit (14) is connected in parallel with the low-voltage arm (13); the low-voltage adjustment circuit (14) is configured to adjust the voltage in the low-voltage arm (13) and output the adjusted voltage by means of the output end (15). The voltage sensor is prevented from being damaged by an external environment, and the accuracy of detection of the primary device is improved.