HIGH-PERFORMANCE QUANTUM DOT INTERMEDIATE BAND GRAPHENE-SCHOTTKY JUNCTION SOLAR CELL AND PREPARATION THEREOF

摘要

A high-performance quantum dot intermediate band graphene-Schottky junction solar cell and a preparation thereof pertaining to the technical field of solar cells. The graphene-Schottky junction solar cell comprises sequentially from bottom to top a bottom electrode (1), a GaAs substrate (2), a surface-reconstructed GaAs layer (3), a GaAs buffer layer (4), a quantum dot intermediate band, a graphene layer (15), and a top electrode (16). The quantum dot intermediate band consists of alternately stacked GaAs cover layers (6, 8, 10, 12, 14) and InAs quantum dot layers (5, 7, 9, 11, 13). The InAs quantum dot layer (5) is located above the GaAs buffer layer (4), and the number of GaAs cover layers (6, 8, 10, 12, 14) is the same as that of the InAs quantum dot layers (5, 7, 9, 11, 13). The introduction of a quantum dot intermediate band in the graphene-Schottky junction solar cell effectively broadens the solar spectrum absorption range of a battery, significantly increases the photogenerated current, and achieves high solar cell photoelectric conversion efficiency.