首页> 外国专利> LARGE OPTICAL CAVITY (LOC) LASER DIODE HAVING QUANTUM WELL OFFSET AND EFFICIENT SINGLE MODE LASER EMISSION ALONG FAST AXIS

LARGE OPTICAL CAVITY (LOC) LASER DIODE HAVING QUANTUM WELL OFFSET AND EFFICIENT SINGLE MODE LASER EMISSION ALONG FAST AXIS

机译:沿轴具有量子阱偏移和有效单模激光发射的大光腔(LOC)激光二极管

摘要

Laser diodes are configured to suppress lasing of a first and higher order modes along a fast axis of an optical beam emitted by the laser diode. An optical cavity is defined by a p-side of the laser diode, an n-side of the laser diode, and an active region located between the p- and n-sides. The n-side has an n-waveguide layer forming at least a portion of a waveguide having a quantum well offset towards the p-side. According to some embodiments, double cladding layers out-couple higher order modes. According to other embodiments, double waveguides (e.g., symmetric and asymmetric) reduce gain applied to higher order modes.
机译:激光二极管被配置为抑制沿着由激光二极管发射的光束的快轴的第一和更高阶模的激光。光腔由激光二极管的p侧,激光二极管的n侧以及位于p侧和n侧之间的有源区域定义。 n侧具有形成波导的至少一部分的n波导层,该波导的量子阱朝向p侧偏移。根据一些实施例,双包层使较高阶模耦合。根据其他实施例,双波导(例如,对称和不对称)减小了应用于高阶模的增益。

著录项

  • 公开/公告号WO2019232261A1

    专利类型

  • 公开/公告日2019-12-05

    原文格式PDF

  • 申请/专利权人 NLIGHT INC.;

    申请/专利号WO2019US34731

  • 发明设计人 CHEN ZHIGANG;KANSKAR MANOJ;

    申请日2019-05-30

  • 分类号H01S5/32;H01S5/20;

  • 国家 WO

  • 入库时间 2022-08-21 11:14:21

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号