VDMOSFET DEVICE HAVING U-TYPE SOURCE GROOVE AND INTEGRATING SCHOTTKY DIODE

摘要

The present invention relates to the field of integrated circuits and disclosed thereby is a VDMOSFET device that has a U-type source groove and that integrates a Schottky diode, comprising a substrate (8); a drain electrode (9) that is disposed below the substrate (8); an N- drift region (7) that is disposed above the substrate (8); a source electrode (4) that is disposed above the N- drift region (7); an N+ source region (5) that is disposed in the N- drift region (7) at two sides of the source electrode (4); a P-type base region (6) that is disposed at the interior of the N- drift region (7); a gate source isolation layer (3) that is disposed above the N+ source region (5); a gate medium (2) and a gate electrode (10); the interface between the source electrode (4) and the N- drift region (7) is a Schottky contact. The device may improve the reliability of device performance and reduce the complexity and costs of design.