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Treatment device for a treatment using a dialectically impeded plasma

机译:用于使用辩证阻碍等离子体进行治疗的治疗装置

摘要

The invention relates to a treatment device for a surface to be treated using a dialectically impeded plasma, comprising a housing (1) which has an end wall (14, 14') and comprising an electrode (18, 33) which is shielded from the surface to be treated by a dielectricum (19, 34) that forms at least one part of the end wall (14, 14') and which can be connected to a high-voltage generator (17). The end wall (14, 14') has at least one spacer (29, 29') by means of which at least one gas chamber is formed when the at least one spacer (29, 29') rests against the surface to be treated, and the dialectically impeded plasma is formed in the gas chamber for the treatment process. The treatment device simultaneously allows a treatment using the dialectically impeded plasma and the metered supply of a treatment agent in that a storage chamber (25, 25') which can be filled with a treatment agent is arranged on the end wall (14, 14') face facing away from the surface to be treated; the end wall (14, 14') has passage openings (28, 28'); and the volume of the storage chamber (25, 25') can be reduced such that the treatment agent reaches the region of the surface to be treated through the passage openings (28, 28') when the volume is reduced.
机译:本发明涉及一种用于使用辩证阻抗等离子体处理表面的处理装置,该装置包括壳体(1),该壳体具有端壁(14、14')并且包括电极(18、33),该电极与电极屏蔽开。被介电体(19、34)处理的表面,该介电体形成端壁(14、14')的至少一部分,并且可以连接至高压发生器(17)。端壁(14、14')具有至少一个隔离物(29、29'),当至少一个隔离物(29、29')抵靠待处理的表面时,通过该隔离物形成至少一个气室。 ,并在气室中形成辩证阻碍的等离子体以进行处理。该处理装置同时允许使用辩证地阻碍的等离子体进行处理,并允许计量供应处理剂,这是因为在端壁(14、14')上可装有处理剂的储存室(25、25') )背离待处理表面的一面;端壁(14、14')具有通孔(28、28');储存室(25、25')的容积可以减小,使得当减小容积时处理剂通过通道开口(28、28')到达待处理表面的区域。

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