HETEROEPITAXIAL STRUCTURE AND METHOD FOR PRODUCING SAME, METAL LAYERED PRODUCT CONTAINING HETEROEPITAXIAL STRUCTURE AND METHOD FOR PRODUCING SAME, AND NANOGAP ELECTRODE AND METHOD FOR PRODUCING NANOGAP ELECTRODE

摘要

This heteroepitaxial structure includes: a first metal part having a polycrystalline structure; and a second metal part on the first metal part. The second metal part has an island-like structure on the first metal part. The second metal part is provided so as to correspond to at least one crystal grain that is exposed at the surface of the first metal part. The second metal part and at least one crystal grain form a heteroepitaxial boundary. The first metal part preferably contains at least one element selected from among platinum (Pt), palladium (Pd), rhodium (Rd), ruthenium (Ru), osmium (Os) and iridium (Ir). The second metal part is preferably gold (Au).