HIGH-ENTROPY HALF-HEUSLER THERMOELECTRIC MATERIAL WITH LOW LATTICE THERMAL CONDUCTIVITY AND PREPARATION METHOD THEREOF

摘要

#$%^&*AU2019101360A420191219.pdf#####HIGH-ENTROPY HALF-HEUSLER THERMOELECTRIC MATERIAL WITH LOW LATTICE THERMAL CONDUCTIVITY AND PREPARATION METHOD THEREOF ABSTRACT The present invention provides a high-entropy Half-Heusler thermoelectric material with a low lattice thermal conductivity and a preparation method thereof The general formula of the high-entropy Half-Heusler thermoelectric material with a low lattice thermal conductivity is ZrxHfi-xNiyPdi-ySn, where x is equal to 0.6 to 0.8, and y is equal to 0.8 to 0.9. The preparation method of the high-entropy Half-Heusler thermoelectric material with a low lattice thermal conductivity comprises the following steps: preparing and mixing materials according to the general formula of Zro.7Hfo. 3Nio.s 5 Pdo.1 5Sn, putting the mixed raw materials in a levitation melting for melting, grinding the obtained ingot into powder and drying it, and sintering the powder by using spark plasma sintering into a bulk high-entropy Half-Heusler thermoelectric material with a low lattice thermal conductivity. The high-entropy Half-Heusler thermoelectric material of the present invention has a relatively low lattice thermal conductivity and a relatively high ZT value.1/2 DRAWINGS v v Zro.7Hfo.3Nio.85Pdo 15 Sn ZrNiSn Ii * 20 30 40 50 60 70 80 90 100 Angle (20) FIG. 1 (a) ZrNiSn 6.0 -+-ZrHfNi Pd Sn 3.0 1.5 S I I I I 300 400 500 600 700 800 900 Temperature (°C) FIG. 2