METHOD FOR QUANTITATIVELY MEASURING CONTENT OF THIOL LIGAND ON QUANTUM DOT SURFACE

摘要

A method for quantitatively measuring a content of a thiol ligand on a quantum dot surface. Bismuth vanadate (BiVO₄) is a visible light responding semiconductor material, has a good photocatalytic activity, and also has a good photoelectric property. Photoelectrochemical (PEC) test is performed, during illumination, an electron hole in a ground state is separated, and it is detected that transited electrons can generate a current. Bismuth sulfide (Bi₂S₃), as a semiconductor material, can form a Bi₂S₃-BiVO₄ heterojunction with the bismuth vanadate; such Bi₂S₃-BiVO₄ heterojunction can improve the separation efficiency of the hole and the electron, and has a larger current strength than BiVO₄ when performing PEC test. A proportion of the bismuth sulfide and the bismuth vanadate is within a certain range; the content of Bi₂S₃ is proportional to a size of a photocurrent; and by testing the size of the photocurrent, quantitative calculation of Bi₂S₃ can be implemented, i.e., the content of the thiol ligand on the quantum dot surface is obtained.