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RADIATION-EMITTING OPTOELECTRONIC COMPONENT, USE OF A RADIATION-EMITTING OPTOELECTRONIC COMPONENT AND METHOD FOR PRODUCING A RADIATION-EMITTING OPTOELECTRONIC COMPONENT
RADIATION-EMITTING OPTOELECTRONIC COMPONENT, USE OF A RADIATION-EMITTING OPTOELECTRONIC COMPONENT AND METHOD FOR PRODUCING A RADIATION-EMITTING OPTOELECTRONIC COMPONENT
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机译:辐射发射光电子组件,辐射发射光电子组件的使用和生产辐射发射光电子组件的方法
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摘要
The invention relates to a radiation-emitting optoelectronic component (1), comprising a semiconductor chip (2) which emits a primary radiation during operation of the component. Furthermore, the radiation-emitting optoelectronic component (1) comprises a conversion element (3) comprising a conversion material which comprises EAxDyOz and Ni ions, where EA is a divalent metal ion and D is a pentavalent metal ion, where x = 3.1-4.9, y = 1.1-2.9 and z = x+5/2y. The conversion element (3) is configured to convert the primary radiation emitted during operation of the component (1) of the semiconductor chip (2) into a secondary radiation, wherein the secondary radiation comprises a wavelength in the range of ≥ 1050 nm and an emission width ≥ 100 nm.
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机译:本发明涉及一种发射辐射的光电子器件(1),其包括半导体芯片(2),该半导体芯片(2)在该器件的运行期间发射初级辐射。此外,发射辐射的光电子器件(1)具有转换元件(3),该转换元件具有包含EA x Sub> D y Sub> O z Sub的转换材料。和Ni离子,其中EA是二价金属离子,D是五价金属离子,其中x = 3.1-4.9,y = 1.1-2.9和z = x + 5 / 2y。转换元件(3)被配置为将在半导体芯片(2)的组件(1)的操作期间发射的初级辐射转换为次级辐射,其中该次级辐射包括在≥1050nm范围内的波长和发射宽度≥100 nm。
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