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AVALANCHE-PHOTODIODE SENSOR AND DISTANCE MEASUREMENT DEVICE

机译:雪崩光电二极管传感器和距离测量装置

摘要

The purpose of the present invention is to improve distance measurement accuracy. An avalanche-photodiode sensor according to an embodiment comprises a first semiconductor substrate (51) and a second semiconductor substrate (52) joined to a first surface of the first semiconductor substrate. The first semiconductor substrate comprises a plurality of photoelectric conversion units (21) arranged in matrix and an element isolation unit (157) that performs element isolation of the plurality of photoelectric conversion units. The plurality of photoelectric conversion units include a first photoelectric conversion unit (21). The element isolation unit has a first element isolation area (157A) and a second element isolation area (157B). The first photoelectric conversion unit is disposed between the first element isolation area and the second element isolation area. The first semiconductor substrate is arranged on a second surface opposite to the first surface and further comprises a plurality of uneven portions (181) arranged between the first element isolation area and the second element isolation area. The second semiconductor substrate comprises a readout circuit (22) connected to the respective photoelectric conversion units.
机译:本发明的目的是提高距离测量精度。根据实施例的雪崩光电二极管传感器包括第一半导体衬底(51)和接合到第一半导体衬底的第一表面的第二半导体衬底(52)。第一半导体基板包括以矩阵状布置的多个光电转换单元(21)和执行多个光电转换单元的元件隔离的元件隔离单元(157)。多个光电转换单元包括第一光电转换单元(21)。元件隔离单元具有第一元件隔离区域(157A)和第二元件隔离区域(157B)。第一光电转换单元设置在第一元件隔离区域和第二元件隔离区域之间。第一半导体衬底布置在与第一表面相对的第二表面上,并且还包括布置在第一元件隔离区域和第二元件隔离区域之间的多个不平坦部分(181)。第二半导体基板包括连接到各个光电转换单元的读出电路(22)。

著录项

  • 公开/公告号WO2020170841A1

    专利类型

  • 公开/公告日2020-08-27

    原文格式PDF

  • 申请/专利权人 SONY SEMICONDUCTOR SOLUTIONS CORPORATION;

    申请/专利号WO2020JP04602

  • 发明设计人 YAGI SHINICHIRO;WAKANO TOSHIFUMI;

    申请日2020-02-06

  • 分类号H01L31/107;H01L21/3205;H01L21/768;H01L23/522;H01L27/146;G01S7/481;G01S17/89;

  • 国家 WO

  • 入库时间 2022-08-21 11:09:44

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