WAVEGUIDE TYPE GEPB INFRARED PHOTODETECTOR, AND MANUFACTURING METHOD THEREFOR

摘要

A waveguide type GePb infrared photodetector, and a manufacturing method therefor. The waveguide type GePb infrared photodetector comprises a silicon substrate (10), and a waveguide layer (11) and a device structure located on the surface of the silicon substrate (10); the device structure comprises a lower contact layer (12), an absorption layer (13), and an upper contact layer (14) sequentially stacked in a direction perpendicular to the silicon substrate (10); the material of the absorption layer (13) is Ge_1-xPb_x, wherein 0x1; an optical signal in the waveguide layer (11) is coupled into the device structure by means of evanescent waves. Therefore, the photodetector can realize efficient absorption from a short wave infrared band to a medium wave infrared band.