首页> 外国专利> SOLID-STATE IMAGE SENSOR, METHOD FOR MANUFACTURING SOLID-STATE IMAGE SENSOR, PHOTOELECTRIC TRANSDUCER, IMAGING DEVICE, AND ELECTRONIC APPARATUS

SOLID-STATE IMAGE SENSOR, METHOD FOR MANUFACTURING SOLID-STATE IMAGE SENSOR, PHOTOELECTRIC TRANSDUCER, IMAGING DEVICE, AND ELECTRONIC APPARATUS

机译:固态图像传感器,制造固态图像传感器的方法,光电传感器,成像设备和电子设备

摘要

The present invention relates to a solid-state image sensor, a method for manufacturing a solid-state image sensor, a photoelectric transducer, an imaging device, and an electronic apparatus, such that the photoelectric conversion efficiency of a blue light organic photoelectric transducer can be increased. In the present invention, an organic photoelectric conversion layer is formed by mixing a first organic semiconductor having a property of absorbing blue light, a second organic semiconductor having a property of absorbing blue light and having a property as a hole transport material having crystallinity, and a third organic semiconductor comprising a fullerene derivative. The present invention can be applied to a solid-state image sensor.
机译:固态图像传感器,固态图像传感器的制造方法,光电换能器,成像装置和电子设备,以使得蓝光有机光电换能器能够实现光电转换效率。增加。在本发明中,有机光电转换层通过混合具有吸收蓝光的特性的第一有机半导体,具有吸收蓝光的特性并且具有结晶性的空穴传输材料的特性的第二有机半导体而形成,第三有机半导体,其包括富勒烯衍生物。本发明可以应用于固态图像传感器。

著录项

  • 公开/公告号WO2020195935A1

    专利类型

  • 公开/公告日2020-10-01

    原文格式PDF

  • 申请/专利权人 SONY CORPORATION;

    申请/专利号WO2020JP11055

  • 发明设计人 SAITO YOSUKE;KANNO MASATO;

    申请日2020-03-13

  • 分类号H01L51/42;H01L27/146;H01L27/30;

  • 国家 WO

  • 入库时间 2022-08-21 11:09:13

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号