ION IMPLANTATION OF DOPANTS FOR FORMING SPATIALLY LOCATED DIFFUSION REGIONS OF SOLAR CELLS

摘要

A diffusion region of the solar cell is formed 231 using a blanket layer of film doped with a dopant of a first conductivity type. A dopant of the second conductivity type is implanted into the selected region of the blanket layer of the film to form a dopant source region of the second conductivity type (232). The diffusion region of the solar cell is formed 233 by diffusing a first conductivity type dopant and a second conductivity type dopant from the blanket layer of the film into the underlying silicon material. The blanket layer of the film may be a P-type dopant source layer doped with boron, wherein phosphorus is implanted into the selected region of the P-type dopant source layer to form an N-type dopant source region in the P-type dopant source layer. .