首页> 外国专利> RGO Bio-Sensor Method for Manufacturing the Same and Method for Sensing Bio-Material Based on Reduced Graphene Oxide

RGO Bio-Sensor Method for Manufacturing the Same and Method for Sensing Bio-Material Based on Reduced Graphene Oxide

机译:RGO生物传感器制造方法以及基于还原氧化石墨烯的生物材料传感方法

摘要

The RGO-based biosensor according to the present invention includes a source electrode and a drain electrode formed on a substrate, a reduced graphene oxide (RGO) channel formed between the source electrode and the drain electrode, and a PDMS supplying a reaction solution to the RGO channel. A chip, a passivation layer for sealing the reaction solution supplied through the PDMS chip so as not to contact the source electrode and the drain electrode, and a gate electrode. At this time, the passivation layer is composed of SU-8 photoresist, and the gate electrode is configured to be in direct contact with the reaction solution to perform liquid phase driving. By constructing the passivation layer with SU-8, the reaction solution supply through the PDMS chip can be made conveniently and stably. Due to the liquid phase driving of the gate electrode, the gate voltage can be driven at a gate voltage of about -1.0 V to 1.0 V, thereby implementing a field effect transistor (FET) type biosensor having high sensitivity.
机译:根据本发明的基于RGO的生物传感器包括:在基板上形成的源电极和漏电极;在源电极和漏电极之间形成的还原氧化石墨烯(RGO)通道;以及将反应溶液提供给电极的PDMS。 RGO频道。芯片,用于密封通过PDMS芯片供应的反应溶液以不与源电极和漏电极接触的钝化层,以及栅电极。此时,钝化层由SU-8光刻胶组成,并且栅电极配置为与反应溶液直接接触以进行液相驱动。通过用SU-8构造钝化层,可以方便,稳定地通过PDMS芯片供应反应溶液。由于栅电极的液相驱动,可以以约-1.0V至1.0V的栅电压驱动栅电压,从而实现具有高灵敏度的场效应晶体管(FET)型生物传感器。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号