Photovoltaic device having a light absorbing layer comprising a plurality of grains of doped semiconductor material

摘要

The present invention relates to a photovoltaic device (10), wherein the photovoltaic device (10) comprises: a first conductive layer (16), a second conductive layer electrically insulated from the first conductive layer, a first conductive layer and a first conductive layer; The grains comprise a porous substrate 20 made of an insulating material arranged between two conductive layers, a plurality of grains 2 of doped semiconductor material disposed on the first conductive layer 16. A light absorbing layer (1) in electrical and physical contact with the conductive layer, and a charge conductive material partially covering the grains and arranged to penetrate the first conductive layer (16) and the porous substrate, A charge conductor 3 which allows a plurality of continuous paths 22 of charge conductive material to be formed from the surface of grains 2 to the second conductive layer 18, wherein the first conductive layer 16 is formed. ) Is a conductive material, the former The oxide layer and the insulating coating together of the first conductive layer 16, including an oxide layer 28 formed on the surface of the polymeric material, and an insulating coating 29 made of an insulating material deposited on the oxide layer. To electrically insulate the paths 22 of the charge conductive material from the conductive material.