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Methods and apparatus for processing 3D MIM capacitor package

机译:处理3D MIM电容器封装的方法和设备

摘要

Methods of treating a substrate include: providing a substrate having a first polymeric dielectric layer; Forming a first RDL on the first polymeric dielectric layer; Configuring the 3D MIM capacitive stack on the first RDL and in at least one opening of the top surface of the second polymer dielectric layer—the 3D MIM capacitive stack is disposed between the top electrode, the bottom electrode, and the top electrode and the bottom electrode. Having an intervening capacitive dielectric layer; Depositing a dielectric layer on the 3D MIM capacitive stack and on the second polymer dielectric layer; And a portion of the dielectric layer to expose at least a portion of the top electrode at the bottom of at least one opening of the 3D MIM capacitive stack and to expose at least a portion of the metal layer at the bottom of the at least one opening of the second polymer dielectric layer. Removing the step.
机译:处理衬底的方法包括:提供具有第一聚合物电介质层的衬底;在第一聚合物介电层上形成第一RDL;在第一RDL上和第二聚合物介电层的顶表面的至少一个开口中配置3D MIM电容堆叠,将3D MIM电容堆叠设置在顶部电极,底部电极以及顶部电极和底部之间电极。具有介电的介电层在3D MIM电容堆叠上和第二聚合物电介质层上沉积电介质层;介电层的一部分在3D MIM电容堆叠的至少一个开口的底部露出顶部电极的至少一部分,并在至少一个的底部露出金属层的至少一部分第二聚合物介电层的开口。删除步骤。

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