SOT-MRAM PERPENDICULAR SOT-MRAM MEMORY CELL USING SPIN SWAPPING INDUCED SPIN CURRENT

摘要

According to the present invention, a vertical spin orbital torque magnetoresistive random access memory (MRAM) memory cell comprises: a magnetic tunnel junction unit including a free layer in a plane; a ferromagnetic layer; and a spacer layer between the ferromagnetic layer and the free layer. The free layer comprises a switchable magnetization direction perpendicular to the plane. The ferromagnetic layer is configured to generate a vertically polarized spin current in response to a current through the ferromagnetic layer and to inject the vertically polarized spin current through the spacer layer into the free layer to change a magnetization direction of the free layer.