A Method Of Fabricating A Wall Of A Metal Package For High Output Semiconductor Devices Using Press Working And Ultrasonic Welding Which Shows Precise Dimension Control and Excellent Heat Emission

摘要

The present invention relates to a method for manufacturing a metal package wall for a semiconductor device such as a high-power semiconductor device or a laser diode having precise dimensional control and excellent heat dissipation characteristics by using press processing and ultrasonic welding. The present invention may comprise: (a) a step of forming a strip-shaped metal band by press processing a metal sheet; (b) a step of bending the metal band so that both longitudinal ends of the metal band are in contact with each other; and (c) a step of bonding both ends of the metal band through ultrasonic welding. According to the present invention, the method for manufacturing a metal package wall for a semiconductor device having precise dimensional control and excellent heat dissipation characteristics can be provided. In addition, a metal package for a semiconductor device can be mass produced with a low defect rate.