METHOD FOR CONTROLLING MOVEMENT OF SKYRMION OR SKYRMIONIUM BY USING VOLTAGE CONTROL GATE

摘要

The present invention relates to a method for controlling a movement of skyrmion or skyrmionium by using a voltage control gate. According to the present invention, a method for controlling a movement of skyrmion or skyrmionium by using a voltage control gate comprises the following steps of: forming a voltage control gate on a movement path of current induced skyrmion or skyrmionium, or on a movement path of skyrmion or skyrmionium to which only voltage is applied without current; controlling the size of a voltage by applying the voltage; and controlling a movement of current induced skyrmion or skyrmionium by lowering or increasing magnetic anisotropy of one part of a track right under the voltage control gate, or controlling a movement of skyrmion or skyrmionium by gradually lowering or increasing magnetic anisotropy thereof along a longitudinal direction of the voltage control gate. According to the present invention, it is possible to control a movement path of current induced skyrmion or skyrmionium by controlling the size of an applied voltage or turning on/off a voltage application by using the voltage control gate, or control a movement path of skyrmion or skyrmionium by locally changing magnetic anisotropy only by voltage without current by using the voltage control gate.;COPYRIGHT KIPO 2020