Disclosed is a silicene electronic device comprising a layer of silycene material. According to the present invention, the layer of silycene material of the silicene electronic device comprises silicon atoms having a two-dimensional honeycomb structure, is doped with at least one material among group 1, group 2, group 16, and group 17, includes a region doped with at least one of a p-type dopant or an n-type dopant. An electrode material layer formed of a material having a work function lower than that of lysine is provided on the silicene material layer.
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