Systems and methods for stabilizing or removing instantaneous beamline film in the AEF region

摘要

The ion implantation system has an ion source configured to form an ion beam and each energy filter (AEF) having an angular energy filter (AEF) region. The gas source immobilizes and/or etches the film present on the AEF by reaction of the film with gas. The gas may be an oxidizing gas or a fluorine-containing gas. The gas source may selectively supply the gas to the AEF region at the same time as the beam is formed. The AEF is heated to assist immobilization and/or etching of the film by the gas. The heating may originate from the ion beam and/or auxiliary heater associated with the AEF. A manifold distributor is operatively coupled to the gas source and can be configured to supply the gas to one or more AEF electrodes.