Ion depth profile controlling method ion implant method and semiconductor device manufacturing method based on the controlling method and ion implant system adapting the controlling method

摘要

The technical idea of the present invention is a method for controlling an ion depth profile so that the ion depth profile becomes a box profile through a single process, an ion implant method based on the control method, a semiconductor device manufacturing method, and a control method thereof. Provides an ion implant system. The control method is a reinforcement that receives the similarity between the ion depth profile, which is the ion concentration according to the depth of the wafer in the ion implant process, and the box profile, which is the target profile, as a reward. Performing reinforcement learning; Acquiring at least one process condition of the ion implant process as a result of the reinforcement learning; And generating a process recipe for the at least one process condition.