Bi2Te3 Bi2Te3 METALIZING METHOD FOR Bi2Te3 THERMOELECTRIC MATERIALS Bi2Te3 THERMOELECTRIC MATERIALS WITH MIXED METALIZING STRUCTURE AND MANUFACTURING METHOD FOR THE SAME

摘要

The present invention relates to a metallization structure and a metallization method of a Bi ₂ Te ₃ thermoelectric material having excellent diffusion preventing effect even at a relatively high temperature. As a method of performing metallization on the surface of a Bi ₂ Te ₃ thermoelectric material, Bi ₂ Te _{3 It} is characterized in that a metallization layer made of a mixture of Ni and Cr is formed on the surface of the thermoelectric material. In the present invention, a metallization layer with excellent anti-diffusion performance at high temperature is easily formed by applying a metallization in which Ni, which is easily attached to a Bi ₂ Te ₃ thermoelectric material, and Cr with excellent anti-diffusion performance at high temperature is applied. There is an effect that can be done. In addition, since Ni powder and Cr powder are separately sintered to produce a metal foil, there is no problem that excessive heat is applied to the Bi ₂ Te ₃ thermoelectric material during the metal foil manufacturing process, and the process of attaching to the Bi ₂ Te ₃ thermoelectric material is not It has a very easy effect. Furthermore, by applying the Bi ₂ Te ₃ Thermoelectric materials from more than 250 ℃ high temperature, it is possible to increase the efficiency of the thermoelectric device using a Bi ₂ Te ₃ Thermoelectric material, there is an excellent effect that can broaden the application range of the Bi ₂ Te ₃ Thermoelectric Module .