2 Structure and Fabrication Method of Photo Detector Device using Two Dimensional Doping Technology

摘要

The present invention relates to a light-receiving element using a two-dimensional doping technique and a method for manufacturing the same, and sequentially stacked on a part of the upper portion of the light absorption epi layer located on the upper front surface of the semiconductor substrate and the light absorption epi layer to form a mesa structure. It includes a focusing layer, an acceleration layer, a multiplication layer, a cap layer and an n ⁺ -type epi layer, wherein the focusing layer and the multiplication layer is assumed to be two-dimensional doped p-type impurity ions.