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Off-chip distributed drain biasing of high power distributed amplifier single high frequency integrated circuit chips

机译:高功率分布式放大器单个高频集成电路芯片的片外分布漏极偏置

摘要

Off-chip distributed drain biasing increases output power and efficiency for high power dispersion amplifier MMICs. The off-chip bias circuit has a common input for receiving a DC bias current and a plurality of parallel connected bias chokes to which the DC bias current is divided. The chokes connect a plurality of drain terminals in different FET amplifier stages to supply DC bias current at different locations along the output transmission line. Off-chip distributed drain biasing increases the level of DC bias current that can be made available to the amplifier, and the load impedance identified at the drain terminal to improve power and efficiency is better for the amplifier stages. The inductances are added to the FET amplifier stages selected to change to match, typically early stages.
机译:片外分布式漏极偏置可提高高功率色散放大器MMIC的输出功率和效率。片外偏置电路具有用于接收DC偏置电流的公共输入和DC偏置电流被分流到的多个并联的偏置扼流圈。扼流圈连接不同FET放大器级中的多个漏极端子,以在沿着输出传输线的不同位置提供DC偏置电流。片外分布式漏极偏置增加了放大器可以使用的直流偏置电流的水平,并且在漏极端识别出的负载阻抗可以提高功率和效率,这对于放大器级来说更好。电感被添加到FET放大器级中,这些级被选择来改变以匹配,通常是早期。

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