CVD CVD CVD-REACTOR AND SUBSTRATE HOLDER FOR A CVD REACTOR

摘要

The present invention relates to a CVD reactor having a reactor housing (1), a process chamber (4), a substrate holder (3) and a heating system (9), inside the process chamber (4) disposed within the reactor housing (1) The furnace can be supplied with a process gas by a gas inlet member (gas inlet member) (2), the upper surface (3 ') of the substrate holder (3) toward the process chamber (4), each substrate The heating system 9 having one or multiple pockets 5 formed so that 7 is only supported on the selected and raised supports 6, and the heating system 9 disposed under the substrate holder 3 is It is arranged spaced from the lower surface 3 "of the substrate holder 3, in this case in relation to the heat transfer from the heating system 9 to the substrate holder 3, located in the central zone of the pocket 5 In the central portion (b), the lower surface (3 ") of the substrate holder (3) surrounds the central portion (b) and Group and the pocket may be formed differently from the adjacent edge zone below the peripheral portion (a) located in the (5). The heating system 9 is formed as a generally planar heat source. A gas flushing device 11 was provided for cleaning the gap 12 using flushing gases with different thermal conductivity. The gap 12 provides heat from the heating system 9 to the substrate holder 3 in the periphery portion a when replacing the first flushing gas having the first thermal conductivity with the second flushing gas having the second thermal conductivity. It has a gap height (s, t) to be changed differently from the central portion (b).