首页> 外国专利> SWITCHING ELEMENT BASED ON VERTICAL STRUCTURES UTILIZING 2-DIMENSIONAL NANO-MATERIALS AND DIELECTRIC-DOUBLE LAYER

SWITCHING ELEMENT BASED ON VERTICAL STRUCTURES UTILIZING 2-DIMENSIONAL NANO-MATERIALS AND DIELECTRIC-DOUBLE LAYER

机译:利用二维纳米材料和双电层的基于垂直结构的开关元件

摘要

The switching element includes a first electrode and an ionic liquid pattern. The first electrode includes graphene. The ionic liquid pattern is disposed on the first electrode. When a voltage is applied to the first electrode, a double layer insulating layer is formed in a first region of the ionic liquid pattern in contact with the first electrode, and a leakage current corresponding to the voltage is generated through the double layer insulating layer. Occurs. The generated leakage current is controlled by a gate voltage applied vertically below the first electrode.
机译:开关元件包括第一电极和离子液体图案。第一电极包括石墨烯。离子液体图案设置在第一电极上。当向第一电极施加电压时,在与第一电极接触的离子液体图案的第一区域中形成双层绝缘层,并且通过双层绝缘层产生与该电压相对应的泄漏电流。发生。所产生的泄漏电流由垂直施加在第一电极下方的栅极电压控制。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号