The present invention relates to a layered AZnBi (where A is any one of K, Na, and Li), a layered ZnBi, ZnBi nanosheet, and a method for manufacturing the same. The present invention is to overcome the structure of the mother phase, which is a limitation of the existing two-dimensional material research, and prepares a layered KZnBi, NaZnBi, LiZnBi through crystal structure transition using ion insertion, and uses this to form ZnBi that does not exist in nature Layered structures and ZnBi nanosheets can be prepared. The layered compound and nanosheet of the present invention have excellent thermoelectric properties and can be used as thermoelectric materials in place of Bi 2 Te 3 -based materials and PbTe-based materials, and can also be applied as magnetic semiconductors due to ferromagnetic properties.
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机译:本发明涉及层状的AZnBi(其中A是K,Na和Li中的任一种),层状的ZnBi,ZnBi纳米片及其制造方法。本发明是为了克服母相的结构,这是现有二维材料研究的局限性,并且通过离子插入通过晶体结构转变来制备层状的KZnBi,NaZnBi,LiZnBi,并使用其形成ZnBi。在自然界中不存在可以制备层状结构和ZnBi纳米片。本发明的层状化合物和纳米片具有优异的热电性质,并且可以代替Bi 2 Sub> Te 3 Sub>基材料和PbTe基材料用作热电材料,并且由于铁磁特性也可以用作磁性半导体。
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