The metal nitride crystals of Group 13 of the periodic table grown with a non-polar surface or a semi-polar surface as a main surface have many lamination defects. An object of the present invention is to provide a metal nitride crystal of Group 13 of the periodic table that suppresses the occurrence of such lamination defects. In the intensity profile in the Qx direction including the maximum intensity derived from the isotropic diagram obtained by the (100) plane X-ray inverse lattice mapping of the crystal, the Qx width representing 1/300 intensity value with respect to the peak intensity value is 6×10 The problem is solved by Group 13 metal nitride crystals of the periodic table of -4 rlu or less.
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