DYNAMIC STATIC RANDOM ACCESS MEMORY SRAM ARRAY CHARACTERIZATION

摘要

A sensor circuit is used to provide the bit-cell read intensity distribution of the SRAM array. A current-mirror circuit that mirrors the bit-line current of the SRAM array is used to power the sensor circuit. A reference current representing the nominal bit-cell read current is used as a reference. The current-mirror circuit senses the bit-line current. Current-mirror and ring oscillators are not part of the bit-line read path.