SYSTEMS AND METHODS FOR TRAINING A THIN FILM RESISTOR INTEGRATED IN AN INTEGRATED CIRCUIT ARRANGEMENT

摘要

A method of forming a thin film integrated resistor (TFR) in a semiconductor integrated circuit device is provided. A first dielectric layer is deposited on an integrated circuit structure (IC structure) with conductive contacts, a resistance film (e.g. made of SiCCr, SiCr, CrSiN, TaN, TaSi or TiN) is deposited over the first dielectric layer, the resistance film etched to define the dimensions of the resistive film, and a second dielectric layer is deposited over the resistive film so that the resistive film is between the first and second dielectric layers. A connection trench layer may be deposited over the second dielectric layer and etched, for example, using a single mask to define openings that expose surfaces of the IC pattern contacts and the resistance film. The openings can be covered with a conductive connecting material, e.g. As copper, are filled to contact the exposed surfaces of the conductive contacts and the resistance film.