首页> 外国专利> Method for voltage contrast imaging with a corpuscular multi-beam microscope, corpuscular multi-beam microscope for voltage contrast imaging and semiconductor structures for voltage contrast imaging with a corpuscular multi-beam microscope

Method for voltage contrast imaging with a corpuscular multi-beam microscope, corpuscular multi-beam microscope for voltage contrast imaging and semiconductor structures for voltage contrast imaging with a corpuscular multi-beam microscope

机译:用小束多束显微镜进行电压对比成像的方法,用于电压对比成像的小束多束显微镜和使用多颗粒显微镜的用于电压对比成像的半导体结构

摘要

The invention comprises a method, a multi-beam particle microscope, and semiconductor structures to charge a semiconductor sample using a plurality of multi-beam particle beams of a multi-beam particle microscope and perform high-resolution voltage contrast imaging without having to switch the multi-beam particle microscope or move the semiconductor sample. In this case, an additive total current from the sum of selected corpuscular beams, each with a low corpuscular current, causes a charge and thus a voltage difference in the semiconductor structure.
机译:本发明包括一种方法,多束粒子显微镜和半导体结构,其使用多束粒子显微镜的多个多束粒子束使半导体样品带电并执行高分辨率电压对比度成像而无需切换多光束粒子显微镜或移动半导体样品。在这种情况下,来自被选择的微粒束的总和的相加总电流,每个都具有低的微粒电流,在半导体结构中引起电荷并因此产生电压差。

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