HIGH-PERFORMANCE AMPLIFIER WITH VARIABLE GAIN FACTOR USING LAMINATE TRANSMISSION STRUCTURES

摘要

One embodiment is an apparatus comprising: a semiconductor integrated circuit (“IC”) chip comprising at least one active component for implementing an amplifier circuit; and a laminate structure comprising a plurality of metal layers, the laminate structure further comprising a plurality of passive components and transmission line-based structures. The semiconductor IC chip is integrated with the laminate structure such that a top layer of the laminate structure has a shield over a top surface of the semiconductor IC chip and the passive components for limiting magnetic coupling of signals generated by the amplifier circuit beyond the laminate structure.