CHEMICAL CLEANING COMPOSITION FOR REMOVING AN AMORPHOUS PASSIVATION LAYER ON THE SURFACE OF CRYSTALLINE MATERIALS

摘要

The present invention relates to a cleaning chemical composition suitable for removing a passivation layer (2) from a substrate (1A, 1B, 4), comprising: - a weak acid at a content of between 20% by weight and 95% by weight, preferably between 50% by weight and 80% by weight, relative to the weight of the chemical composition, - a strong non-oxidizing acid at a content of between 5% by weight and 50% by weight, preferably between 15% by weight and 50% by weight, relative to the weight of the chemical composition, - hydrofluoric acid, at a content of between 0.2% by weight and 2% by weight relative to the weight of the chemical composition, water, at a content of between 0% by weight and 20% by weight relative to the weight of the chemical composition. Another object of the invention relates to a cleaning method for removing a passivation layer (2) from a substrate (1A, 1B, 4), comprising the following steps: - providing a cleaning chemical composition in accordance with the preceding composition , - bringing the cleaning chemical composition into contact with the passivation layer (2) for a sufficient time to remove said passivation layer (2) from the substrate (1A, 1B, 4).