Method for manufacturing at least one semiconductor structure with spiral separation layer of growth substrate

摘要

The invention relates to a method (11) for preparing at least one "(20)" semiconductor structure separated from a support substrate,2. Including the following steps: Manufacturing "- core layer" ("13") from support substrate;-Fabrication of semiconductor structures from nuclear epitaxy（-Obtaining a first electrode (30 ") located in a side region (" 3 ") at the edge of the semiconductor structure;-The arrangement of the structure formed in the 'water electrolyte' (` 50 ') bath;-Application of potential difference between electrodes (..., 30, 40)Until the semiconductor structure is detached from the support substrate (11.0.0)“（