首页> 外国专利> PROCESS FOR DENSIFICATION BY CHEMICAL INFILTRATION IN GAS PHASE OF ANNULAR POROUS SUBSTRATES

PROCESS FOR DENSIFICATION BY CHEMICAL INFILTRATION IN GAS PHASE OF ANNULAR POROUS SUBSTRATES

机译:环状多孔基质气态化学渗透致密化的方法

摘要

The invention relates to a method of densification by chemical gas infiltration of porous annular substrates (18), the method comprising at least the following steps: providing a plurality of unit modules (10) comprising a support plate (14) on which is formed as a stack of substrates, the support plate comprising a central gas inlet opening (14a) communicating with an internal volume (17) formed by the central passages (18a) of the stacked substrates and gas discharge openings (14b ) distributed angularly around the central opening, and a cylinder (16) forming thermal mass arranged around the stack of substrate having a first end (16a) integral with the support plate and a second end (16b) free, forming stacks of unit modules in the enclosure (34) of a densification furnace, and injecting into the stacks of unit modules a gas phase comprising a gaseous precursor of a matrix material at d lay out within the porosity of the substrates.
机译:本发明涉及一种通过化学气体渗透对多孔环形基底(18)进行致密化的方法,该方法至少包括以下步骤:提供多个单元模块(10),该单元模块包括支撑板(14),该支撑板(14)形成为一叠基板,支撑板包括与由堆叠基板的中央通道(18a)形成的内部容积(17)连通的中央进气口(14a)和围绕该中央开口成角度分布的排气口(14b)以及形成热质量的圆柱体(16)布置在衬底的堆叠周围,该衬底的堆叠具有与支撑板成一体的第一端(16a)和自由的第二端(16b),从而在单元的外壳(34)中形成单元模块的堆叠。致密化炉,并在衬底的孔隙率内将包含基体材料的气态前体的气相注入单元模块的堆叠中,该气相沉积在d。

著录项

  • 公开/公告号FR3084672B1

    专利类型

  • 公开/公告日2020-10-16

    原文格式PDF

  • 申请/专利权人 SAFRAN CERAMICS;

    申请/专利号FR1857284

  • 发明设计人 LAMOUROUX FRANCK;DUPONT REMY;ROS WILLIAM;

    申请日2018-08-03

  • 分类号C23C16/44;C04B35/83;C23C16/455;C23C16/458;

  • 国家 FR

  • 入库时间 2022-08-21 11:00:32

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号